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Dual High Speed Low-Side MOSFET Driver
POWER MANAGEMENT Description
The SC1302A/B/C/D/E/F family are low cost dual lowside MOSFET drivers. These drivers accept TTL-compatible inputs and are capable of supplying high current outputs (> 2A peak) to external MOSFETs. Fast switching allows operation up to 1 MHz. The SC1302A/B/C is available in six configurations: SC1302A is a dual noninverting, SC1302B is a dual inverting and SC1302C is a one inverting plus one non-inverting output. The SC1302D/E/F is the derivative part from SC1302A/ B/C with pin 1 (EN) and pin 8 (SHDN) internally tied to VCC. An under-voltage lockout circuit guarantees that the driver outputs are low when Vcc is less than 4.5V (typ). An internal temperature sensor shuts down the driver in the event of over temperature.
SC1302A/B/C/D/E/F
Features
+4.5V to +16.5V operation Fast rise and fall times (20ns typical with 1000pf load) Dual MOSFET driver 2A peak drive current 40ns propagation delay 8-pin SOIC / MSOP packages Enable/disable control TTL-compatible input Under voltage lockout with hysteresis Low shutdown supply current Over temperature protection ESD protection Dual inverting/non-inverting and inverting/non-inverting configurations
Applications
Switch-mode power supplies Battery powered applications Solenoid and motor drives
Typical Application Circuit
+12V V lo a d
10uF
0 .1 u F Load A S C1302A 6 VCC IN A O U TA 1 8 EN S H D N O U TB IN B GND 3 5 7 Load B
In p u tA
2
In p u tB 4
Revision: April 27, 2005
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SC1302A/B/C/D/E/F
POWER MANAGEMENT Absolute Maximum Ratings PRELIMINARY
Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not implied. Exposure to Absolute Maximum rated conditions for extended periods of time may affect device reliability.
Parameter Supply Voltage Operating Supply Voltage Input Voltages Peak Output Currents Enable Voltage (SC1302A/B/C) Shutdown Voltage (SC1302A/B/C) Continuous Power Dissipation Operating Temperature Range Thermal Resistance Junction to Ambient (MSOP) Thermal Resistance Junction to Ambient (SOIC) Storage Temperature Range Lead Temperature (Soldering)10 sec ESD Rating (Human Body Model)
Symbol V CC VCC VINA, VINB IOUTA, IOUTB V EN VSHDN Pd TA J A J A TSTG TLEAD ESD
Typ -0.3 to 20 -0.3 to 16.5 -0.3 to VCC 3 -0.3 to VCC -0.3 to VCC Internally limited -40 to +125 206 165 -65 to +150 260 2
Units V V V A V V W C C/W C/W C C kV
DC Electrical Characteristics
Unless otherwise specified: -40C < TA < 125C, VCC = 12V, VIN = 5V, VEN = 5V (SC1302A/B/C) , VSHDN = 5V (SC1302A/B/C).
Parameter Supply Current Quiescent Current Quiescent Current Quiescent Current Under-Voltage Lockout Threshold Voltage Hysteresis Enable for SC1302A/B/C Enable Voltage Disable Voltage
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Symbol
Conditions
Min
Typ
Max
Units
IQ IQ IQ
VCC < VSTART VEN = VSHDN = 3V for SC1302A/B/C, VINA = VINB = 3V VSHDN = 0V for SC1302A/B/C
1 5.7 3
1.8 8.1 8
mA mA A
VSTART
VSHDN = VEN = 3V for SC1302A/B/C, VINA = VINB = 3V VSHDN = VEN = 3V for SC1302A/B/C, VINA = VINB = 3V
4.2 250
4.5 320
4.7 475
V mV
V EN V EN
0 < V EN < V C C 0 < V EN < V C C
2
2.0 0.8
V V
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SC1302A/B/C/D/E/F
POWER MANAGEMENT DC Electrical Characteristics (Cont.)
Unless otherwise specified: -40C < TA < 125C, VCC = 12V, VIN = 5V, VEN = 5V (SC1302A/B/C) , VSHDN = 5V (SC1302A/B/C).
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Enable for SC1302A/B/C (Cont.) Delay to Output (1) Delay to Output (1) Enable Input Current Input High Level Input Voltage Low Level Input Voltage Input Current VIH VIL IIN 0 < VIN < VCC 0 < VIN < VCC 0 < VIN < VCC Non-Inverting Input(s) of SC1302A/C/D/F 0 < VIN < VCC Inverting Input(s) of SC1302B/C/E/F Output Output Peak Current IPK_SOURCE IPK_SINK Shutdow n SC1302A/B/C (Cont.) SHDN Input Voltage High SHDN Input Voltage Low SHDN Pin Current Thermal Shutdow n Over Temperature Trip Point(1) Hysteresis(1) TJ_OT 150 10 C C VSHDN VSHDN ISHDN VSHDN = 5V 32 2 0.3 40 V V A VOUT = 0.5V, tPW < 10uS VOUT = VCC - 0.5V, tPW < 10uS 1600 1600 mA mA
(2)
tD_EN tD_DIS
IEN
EN for low to high EN from high to low 0 < VIN < VCC 10
70 55 14 19
ns ns A
2.0 0.8 13 18.5
V V A
-8
A
AC Electrical Characteristics
Unless otherwise specified: TA = 25C, VCC = 12V, VEN = 5V, CL = 1000pF
Parameter Rise time(1) Fall time(1) Propagation delay time(1) Propagation delay time(1) Symbol tR tF tD1 tD2 Conditions See Timing Diagram See Timing Diagram See Timing Diagram See Timing Diagram Min Typ 20 20 53 41 Max Units ns ns ns ns
Notes: (1) Guaranteed by design not tested in production. (2) Negative sign indicates that the input current flows out of the device.
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SC1302A/B/C/D/E/F
POWER MANAGEMENT Timing Diagram
5V 90 %
PRELIMINARY
Inpu t
0V
10 % tR tF 90 % 10 % 90 % 10 %
N on -in ve rting Ou tp u t SC1302A Inve rtin g Ou tp u t SC1302B
90 %
tF
tR 90 % 10 %
10 % tD2
tD 1
Pin Descriptions
Pin # SC1302A/D SC1302B/E SC1302C/F Pin Function Enable/disable control. When the EN is driven low, both outputs are low. When left open, both outputs are low. Enable both drivers by tying EN pin to a voltage greater than 2V. No connection on versions D, E and F. TTL-compatible input to the driver A. When left open, Pin 7 is low. Ground. TTL-compatible input to the driver B. When left open, Pin 5 is low. Output gate drive B for external MOSFET. Supply: +4.5V to +16.5V supply. During UVLO, the outputs are held low. Output gate drive A for external MOSFET. Shutdown pin. Apply a voltage from 2V to VCC to enable device. Pull below 0.3V for low-power shut down. No connection on versions D, E and F.
1
EN/NC
EN/NC
EN/NC
2 3 4 5 6 7 8
INA GND INB OUTB VCC OUTA SHDN/NC
INA GND INB OUTB VCC OUTA SHDN/NC
INA GND INB OUTB VCC OUTA SHDN/NC
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SC1302A/B/C/D/E/F
POWER MANAGEMENT Pin Configuration
Top View SC1302A/D (Dual Non-Inverting)
Ordering Information
Part Number (2) SC1302AISTRT SC1302BISTRT SC1302CISTRT SC1302DSTRT SC1302ESTRT SC1302FSTRT SOIC-8 -40C to +125C P ackag e
(1)
Temp. Range (TA)
EN/NC INA GND INB
1 2 3 4
8 7 6 5
SHDN/NC OUTA VCC OUTB
(8-Pin SOIC (A/D) or MSOP (A only) Top View SC1302B/E (Dual Inverting)
SC1302AIMSTRT SC1302BIMSTRT SC1302CIMSTRT MSOP-8 -40C to +125C
EN/NC INA GND INB
1 2 3 4
8 7 6 5
SHDN/NC OUTA VCC OUTB
Notes: (1) Only available in tape and reel packaging. A reel contains 2500 devices. (2) Lead free product.This product is fully WEEE and RoHS compliant.
(8-Pin SOIC (B/E) or MSOP (B only)
Top View SC1302C/F (Inverting + Non-Inverting)
EN/NC INA GND INB
1 2 3 4
8 7 6 5
SHDN/NC OUTA VCC OUTB
(8-Pin SOIC (C/F) or MSOP (C only)
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SC1302A/B/C/D/E/F
POWER MANAGEMENT Block Diagrams
EN VCC EN
PRELIMINARY
VCC
INA BIAS
PREDRIVER
OUTA INA BIAS
PREDRIVER
OUTA
SHDN
BANDGAP
SHDN
BANDGAP
INB
PREDRIVER
BIAS
BIAS
OUTB INB
PREDRIVER
OUTB
SC1302A
EN
SC1302B
GND GND
VCC
INA BIAS
PREDRIVER
OUTA
SHDN
BANDGAP
BIAS
INB
PREDRIVER
OUTB
SC1302C
GND
SC1302D
SC1302E
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SC1302F
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SC1302A/B/C/D/E/F
POWER MANAGEMENT Typical Characteristics
Rise and Fall Time vs. Supply Volta ge 25
CL = 1 000pF T A = 25 C
Rise and Fall Time vs. Capa citive Loa d 80
VCC = 1 2V f= 200K H z C T A = 25
60 Time (ns) Time (ns) 20 tf tr
tf 40 tr 20
15
10 4 8 12 16 Supply Voltage (V)
0 100 1000 Capacitive Load (pF) 10000
Supply Current vs. Capacitive Loa d 40
2V VCC = 1 O ne D rverR unni i ng C T A = 25
Input Pin Current 15 10 5 0 -5
I nver i tng N on-nveri i tng
Supply Currnt (mA)
30
20
200K H z
10
1 00K H z
Iin (uA)
0 100 1000 Capacitive Load (pF) 10000
-10 0 4 Vin (V) 8 12
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SC1302A/B/C/D/E/F
POWER MANAGEMENT Applications Information
The SC1302A/B/C/D/E/F is a high speed, high peak current dual MOSFET driver. It is designed to drive power MOSFETs with ultra-low rise/fall time and propagation delays. As the switching frequency of PWM controllers is increased to reduce power converters volume and cost, fast rise and fall times are necessary to minimize switching losses. While discrete solution can achieve reasonable drive capability, implementing delay and other housekeeping functions necessary for safe operation can become cumbersome and costly. The SC1032A/B/C/ D/E/F presents a total solution for the high-speed, high power density applications. Wide input supply range of 4.5V - 16.5V allows use in battery powered applications as well as distributed power systems. Supply Bypass and Layout A 4.7F to 10F tantalum bypass capacitor with low ESR (equivalent series resistance) and an additional 0.1F ceramic capacitor in parallel are recommended as supply bypass to control switching and supply transients. As with any high speed, high current circuit, proper layout is critical in achieving optimum performance of the SC1302A/B/C/D/E/F. Attention should be paid to the proper placement of the driver, the switching MOSFET and the bypass capacitors. The driver should be placed as close as possible to the external MOSFETs to eliminate the possibility of oscillation caused by trace inductance and the MOSFET gate capacitance. A resistor in the range of 10W could be used in series with the gate drive to damp the ringing if the drive output path is not short enough. The bypass capacitors should also be placed closely between Vcc and GND of the driver. A Schottky diode may be used to connect the ground and the output pin to avoid latchups in some applications. Drive Capability and Power Dissipation The SC1302A/B/C/D/E/F is able to deliver 1.6A peak current for driving capacitive loads, such as MOSFETs. Fast switching of the MOSFETs significantly reduces switching losses for high frequency applications. Thermal stress is reduced and system reliability is improved.
PRELIMINARY
For simplicity, we assume that the gate capacitance of a MOSFET is constant. The power delivered from the power supply can be estimated based on this simplification. The energy needed to charge the capacitor is given by:
1 C V2 2 where C is the load capacitance and V is the output voltage swing of the driver. E ON =
During turn off, the same amount of energy is dumped to the ground. Therefore, the energy dissipated in one switching cycle is:
E TOTAL = C V 2
The power dissipation due to the gate driving actions is given by:
PGATE = f C V 2
where, f is the switching frequency. with V CC= 12V, C = 1nF and f = 200kHz, the power dissipation per output is:
PGATE = (200 kHz ) (1 nF) (12) = 29mW
2
The corresponding supply current is:
I=
PGATE 29mW = = 2.4mA VCC 12V
Thermal Information The driver's junction temperature must be kept within the rated limit at any time. The application system has to effectively remove the heat generated in the driver in order for proper functions and performance. If the junction temperature reaches 150oC, the internal protection circuit will be triggered to shut down the gate driver. The power dissipation of the SC1302A/B/C/D/E/F should be derated according to the following formula:
Power Dissipatio n <
A
125C - TA jA
where T = ambient temperature.
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SC1302A/B/C/D/E/F
POWER MANAGEMENT Outline Drawing - MSOP-8
e/2 A N 2X E/2 PIN 1 INDICATOR ccc C 2X N/2 TIPS 12 e B E1 E D
DIMENSIONS INCHES MILLIMETERS DIM MIN NOM MAX MIN NOM MAX
A A1 A2 b c D E1 E e L L1 N 01 aaa bbb ccc .043 .000 .006 .030 .037 .015 .009 .003 .009 .114 .118 .122 .114 .118 .122 .193 BSC .026 BSC .016 .024 .032 (.037) 8 0 8 .004 .005 .010 1.10 0.00 0.15 0.75 0.95 0.22 0.38 0.08 0.23 2.90 3.00 3.10 2.90 3.00 3.10 4.90 BSC 0.65 BSC 0.40 0.60 0.80 (.95) 8 0 8 0.10 0.13 0.25
aaa C SEATING PLANE
D A2 A GAGE PLANE 0.25
H c
C
A1 bxN bbb C A-B D
L (L1) DETAIL
01
A
SIDE VIEW
NOTES: 1.
SEE DETAIL
A
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 4. REFERENCE JEDEC STD MO-187, VARIATION AA.
Land Pattern - MSOP-8
X
DIM
(C) G Z C G P X Y Z
DIMENSIONS INCHES MILLIMETERS
(.161) .098 .026 .016 .063 .224 (4.10) 2.50 0.65 0.40 1.60 5.70
Y P
NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET.
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SC1302A/B/C/D/E/F
POWER MANAGEMENT Outline Drawing - SO-8
A N 2X E/2 E1 E 1 ccc C 2X N/2 TIPS 2 e/2 B D aaa C SEATING PLANE A2 A C bxN bbb A1 C A-B D GAGE PLANE 0.25 SEE DETAIL SIDE VIEW L (L1) DETAIL e D
PRELIMINARY
DIM
A A1 A2 b c D E1 E e h L L1 N 01 aaa bbb ccc
DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX
.069 .053 .004 .010 .049 .065 .012 .020 .007 .010 .189 .193 .197 .150 .154 .157 .236 BSC .050 BSC .010 .020 .016 .028 .041 (.041) 8 0 8 .004 .010 .008 1.35 1.75 0.10 0.25 1.25 1.65 0.31 0.51 0.17 0.25 4.80 4.90 5.00 3.80 3.90 4.00 6.00 BSC 1.27 BSC 0.25 0.50 0.40 0.72 1.04 (1.04) 8 0 8 0.10 0.25 0.20
h h
H
c
01
A
A
NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 4. REFERENCE JEDEC STD MS-012, VARIATION AA.
Land Pattern - SO-8
X
DIM
(C) G Z C G P X Y Z
DIMENSIONS INCHES MILLIMETERS
(.205) .118 .050 .024 .087 .291 (5.20) 3.00 1.27 0.60 2.20 7.40
Y P
NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET.
2. REFERENCE IPC-SM-782A, RLP NO. 300A.
Contact Information
Semtech Corporation Power Management Products Division 200 Flynn Rd., Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804
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